2SD2600

No.8564-1/3

Applications

• Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.

Features

• High DC current gain.

• Large current capacity and wide ASO.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Collector-to-Base Voltage VCBO 110 V

Collector-to-Emitter Voltage VCEO 100 V

Emitter-to-Base Voltage VEBO 6 V

Collector Current IC 8 A

Collector Current (Pulse) ICP 12 A

Collector Dissipation PC Tc=25°C 35 W

Junction Temperature Tj 150 °C

Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C

Ratings

Parameter Symbol Conditions

min typ max

Unit

Collector Cutoff Current ICBO VCB=80V, IE=0A 0.1 mA

Emitter Cutoff Current IEBO VEB=5V, IC=0A 3.0 mA

DC Current Gain hFE VCE=3V, IC=4A 1500 4000

Gain-Bandwidth Product fT VCE=5V, IC=4A 20 MHz

Collector-to-Emitter Saturation Voltage VCE(sat) IC=4A, IB=8mA 0.9 1.5 V

Base-to-Emitter Saturation Voltage VBE(sat) IC=4A, IB=8mA 2.0 V

Collector-to-Base Breakdown Voltage V(BR)CBO IC=5mA, IE=0A 110 V

Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=50mA, RBE=100 V

Turn-ON Time ton See specified test circuit. 0.6 s

Storage Time tstg See specified test circuit. 4.8 s

Fall Time tf See specified test circuit. 1.6 s

SANYO Semiconductors

DATA SHEET

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : EN8564

73106IA MS IM TA-1084

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

2SD2600 NPN Triple Diffused Planar Silicon Darlington Transistor

Driver Applications

2SD2600

No.8564-2/3

Package Dimensions Switching Time Test Circuit

unit : mm (typ)

7002-003

Electrical Connection

6.2

7.8

8.2

0.2

4.2 0.4

1.0 1.0

5.08

2.54 2.54

8.4

10.0

1.2

0.3

0.6

0.6

0.7

7.8

5.2

6.2

10.0

6.0

2.5

1 2

3

1 : Base

2 : Emitter

3 : Collector

SANYO : ZP

10

8

6

4

2

0

0 1 2 3 4 5

IC -- VCE

0 1 2 3 4 5

IB=0mA

2mA

4mA

IT03402

IC -- VCE

IB=0A

200A

800A

1000A

600A

400A

IT03403

8

6

4

2

0

From top

20mA

18mA

16mA

14mA

12mA

10mA

8mA

6mA

From top

2000A

1800A

1600A

1400A

1200A

Ta=120°C

--40°C 1000

10000

5

3

2

5

5 7

7

7

3

2

2

100

0.1 2 3 5 7 1.0 2 3 5 7 10

hFE -- IC

25°C

VCE=3V

IT03405

Ta=120°C

--40°C

8

6

4

2

0

VCE=3V

25°C

0.4 0.8 1.2 1.6 2.0 2.4

IC -- VBE

IT03404

Collector-to-Emitter Voltage, VCE -- V

Collecotr Current, IC -- A

Collector-to-Emitter Voltage, VCE -- V

Collecotr Current, IC -- A

Base-to-Emitter Voltage, VBE -- V

Collector Current, IC -- A

Collector Current, IC -- A

DC Current Gain, hFE

VBE= --5V VCC=50V

INPUT

OUTPUT

100F 470F

50

RB RL

12.5

VR

PW=50s

DC1%

500IB1= --500IB2=IC=4A

TUT

+ +

IB2

IB1

6k200

C

E

B

2SD2600

No.8564-3/3

0

50

40

30

20

10

0 20 40 60 80 100 120 140 160

PC -- Tc

IT03409

10ms

100ms

1.0

5

2

2

3

5

2

3

5

2

3

10

0.1

2 3 5 7 10 2 3 5 7 100 2

DC operation

1ms to 100ms : Single pulse

ICP=12A

1ms

IC=8A

IT03408

Tc=25°C

A S O

Collector-to-Emitter Voltage, VCE -- V

Collector Current, IC -- A

Case Temperature, Tc -- °C

Collector Dissipation, PC -- W

0.1 2 3 5 7 1.0 2 3 5 7 10

10

5

3

2

1.0

5

3

7

7

0.1 2 3 5 7 1.0 2 3 5 7 10

10

5

3

2

1.0

5

7

7

VCE(sat) -- IC

25°C

IC / IB=500

120°C

Ta= --40°C

IT03406

25°C

IC / IB=500

120°C

VBE(sat) -- IC

IT03407

Ta= --40°C

Collector Current, IC -- A

Collector-to-Emitter

Saturation Voltage, VCE(sat) -- V

Collector Current, IC -- A

Base-to-Emitter

Saturation Voltage, VBE(sat) -- V

Specifications of any and all SANYO Semiconductor products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state,

and are not guarantees of the performance, characteristics, and functions of the described products

as mounted in the customer's products or equipment. To verify symptoms and states that cannot be

evaluated in an independent device, the customer should always evaluate and test devices mounted

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and all semiconductor products fail with some probability. It is possible that these probabilistic failures

could give rise to accidents or events that could endanger human lives, that could give rise to smoke or

fire, or that could cause damage to other property. When designing equipment, adopt safety measures

so that these kinds of accidents or events cannot occur. Such measures include but are not limited to

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In the event that any or all SANYO Semiconductor products (including technical data,services) described

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Any and all information described or contained herein are subject to change without notice due to

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for the SANYO Semiconductor product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not

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PS

This catalog provides information as of July, 2006. Specifications and information herein are subject

to change without notice.